Semi-insulating InP substrates from four producers were studied by galvanomagnetic methods, X-ray diffraction, laser scattering tomography, and scanning electron beam induced current techniques. The detection performances of radiation detectors fabricated from the materials were tested using 59.5 and 122keV γ-ray sources. The highest apparent Hall mobility was observed in a substrate with low Fe content, produced by LEC method and a post-growth wafer annealing process. Detectors based on this material exhibited the best overall detection performance. SI InP material grown by VGF method showed the lowest dislocation and precipitate densities and also acceptable detection performance.

Correlation of Crystal Defects and Galvanomagnetic Parameters of Semi-Insulating InP with Performance of Radiation Detectors Fabricated from Characterised Materials. P.Boháček, D.Korytár, C.Ferrari, F.Dubecký, B.Surma, B.Zatko, V.Smatko, J.Huran, R.Fornari, M.Sekáčová, S.Strzelecka: Materials Science and Engineering B, 2002, 91-92, 516-20