The effect of Fe doping on the elastic and anelastic properties of hetero-epitaxial InP films on micro-fabricated Si cantilevers was investigated by using the vibrating-reed technique (100Hz to 10kHz), with strain amplitudes in the range of 10–6 to 10–3, at 113 to 508K. A matter of particular interest was the effect of iron doping on the motion and multiplication of dislocations which were known to restrict the application of the material for instance in opto-electronic devices. For this purpose, the amplitude dependence of damping as well as internal friction as a function of temperature, thermal treatment and frequency were investigated and were analyzed in terms of the present knowledge about twins and dislocations in InP. In addition, Young's modulus as well as film stress were measured as a function of temperature, which permits an estimate of the thermal expansion coefficient.

Elastic and Anelastic Properties of Fe-Doped InP Films on Silicon Cantilevers. F.B.Klose, U.Harms, H.Neuhäuser, A.Bakin, I.Behrens, E.Peiner, H.H.Wehmann, A.Schlachetzki, J.Rösler: Journal of Applied Physics, 2002, 91[11], 9031-8