A new concept of epitaxy - micro-channel epitaxy - was presented. In micro-channel epitaxy, lattice information was transferred through narrow micro-channels while the transfer of defect information was prevented by the presence of an amorphous film at the epitaxial layer/substrate interface. Vertical and horizontal micro-channel epitaxy were possible. Particular attention was paid here to horizontal micro-channel epitaxy. This involved selective-area epitaxy in the narrow micro-channel and successive epitaxial lateral growth. It was demonstrated that flat micro-channel epitaxial layers were successfully obtained for InP on Si substrates. Although dislocations propagated through the micro-channel and into the grown layer, wide dislocation-free regions were obtained outside of this dislocated area. Micro-channel epitaxy, with a high width/thickness ratio, was achieved via molecular beam epitaxy by directing molecular beams at a low angle to the substrate surface.

Microchannel Epitaxy - an Overview. T.Nishinaga: Journal of Crystal Growth, 2002, 237-239, 1410-7