Solid solutions (Pb1-xSnxTe:Gd) were grown from the melt by using the Bridgman method and were Gd-doped during growth. They were then investigated by using 119Sn Mössbauer spectroscopy. It was found that the doping had an appreciable effect upon the Mössbauer spectrum linewidth. The observed changes in linewidth were explained in terms of changes in the local surrounding of the Sn nuclei and by an electric field gradient increase caused by Te vacancies. It was concluded that Gd doping during the growth of these solid-solution crystals caused a decrease in the concentration of Te vacancies.

Study of the Gd Impurity Influence on the Defect Structure of Pb1-xSnxTe Crystals by Means of 119Sn Mössbauer Spectroscopy. D.M.Zayachuk, Y.O.Polyhach, V.I.Mikityuk, D.Baltrunas: Physica Status Solidi B, 2001, 225[2], 311-6