Marker-layers of B were used to analyze the evolution of B-interstitial clusters which formed during transient enhanced diffusion. The approach was based upon the measurement of B activation by spreading resistance profiling after the annealing of Si implantation damage. A wide range of implant conditions was investigated in terms of defect densities below and above the amorphization threshold of Si. A common behavior of B-interstitial clusters was described in terms of the trapping and release of B atoms.

The B-interstitial cluster density was determined as a function of time for various concentration ratios of I and B.

Electrical Activation of B in the Presence of Boron-Interstitials Clusters. G.Mannino, S.Solmi, V.Privitera, M.Bersani: Applied Physics Letters, 2001, 79[23], 3764-6

Figure 3

Diffusivity of Al in Si