The Si samples used here contained a sequence of alternating B and Sb spikes grown by molecular beam epitaxy. These samples were irradiated with 2.5MeV protons at 580 to 830C and characterized by secondary-ion mass spectrometry. The energy of the proton beam was chosen such that the generation rate of point defects could be considered as uniform throughout the delta-doped layers. For each sample the B and the Sb diffusion coefficient were increased under irradiation as compared to their diffusivity in unirradiated areas. A measurable diffusion of Sb was observed in samples containing both B and Sb spikes even at temperatures as low as 580C while a reference sample containing only an Sb spike did not exhibit any radiation enhanced diffusion, even at 830C. The B diffusion coefficient increases as the irradiation temperature increases but the Sb diffusion coefficient decreases for the highest irradiation temperature investigated.

Influence of Boron on Radiation Enhanced Diffusion of Antimony in Delta-Doped Silicon. P.Lévêque, J.S.Christensen, A.Y.Kuznetsov, B.G.Svensson, A.Nylandsted Larsen: Journal of Applied Physics, 2002, 91[7], 4073-7