A kinetic 3D lattice Monte-Carlo model was introduced, which allows to describe the evolution of B-rich Si, especially the formation of B-interstitial clusters of various structures and compositions. Using a refined bcc lattice with lattice constant abcc=aSi/4 a large variety of defect configurations could be mapped essentially without geometrical distortions. The energetics of defects could be specified by means of a set of energy parameters. Boron diffusion was implemented via an interstitial-assisted mechanism. First results of interstitial-mediated B clustering were presented. The future capabilities to study the kinetics of BnIm cluster formation were outlined.

A Kinetic Lattice Monte-Carlo Approach to the Evolution of Boron in Silicon. M.Strobel, A.La Magna, S.Coffa: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 339-43