Interstitial 57mFe atoms, excited into the 14.4keV Mössbauer state, were created in Si at 400 to 800K as a result of the recoil imparted to daughter atoms during the β–decay of ion-implanted substitutional 57Mn. Diffusional jumps of interstitial 57mFe caused a line-broadening of the Mössbauer spectra which was directly proportional to the diffusivity. Charge-state dependent diffusivities could thus be determined (figure 4).

Charge State Dependence of the Diffusivity of Interstitial Fe in Silicon Detected by Mössbauer Spectroscopy. H.P.Gunnlaugsson, G.Weyer, M.Dietrich, Isolde, M.Fanciulli, K.Bharuth-Ram, R.Sielemann: Applied Physics Letters, 2002, 80[15], 2657-9