Infrared absorption studies of defect formation in Czochralski Si irradiated with fast electrons at 80 to 900K were performed. Samples with different contents of O (16O, 18O) and C (12C, 13C) isotopes were investigated. The main defect reactions were found to depend strongly on irradiation temperature and dose, as well as on impurity content and pre-history of the samples. Some new radiation-induced defects were revealed after irradiation at elevated temperatures as well as after a 2-step (high + room-temperature irradiation.

Defect Engineering in Czochralski Silicon by Electron Irradiation at Different Temperatures. J.L.Lindström, L.I.Murin, T.Hallberg, V.P.Markevich, B.G.Svensson, M.Kleverman, J.Hermansson: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 121-5