Silicon detectors produced from materials with different resistivities and O concentrations were irradiated with energetic neutrons, protons and pions. Isothermal annealing studies have shown correlation between microscopic defect evolution and the macroscopic detector performance. It was found that the annealing behavior of the electron traps attributed to the single and double charged divacancy was strongly related to the current related damage parameter. In both cases the isothermal evolution was independent of the O and doping concentration in the material under investigation ([O] = 2 x 1014 to 1018/cm3, [P] = 1012 to 4 x 1013/cm3) and the absolute values did not depend on the particles used for the irradiation provided the fluence was properly normalized by the non-ionizing energy loss. In contrast to this result the introduction rates of the observed point defects VOi and CiCs were however found to depend on the particle type. Thus clear indication was given that the generation of point defects does not scale with non-ionizing energy loss. Compared to neutron irradiated samples the introduction rate after irradiation with charged hadrons was found to be higher by a factor around 2.

Relation between Microscopic Defects and Macroscopic Changes in Silicon Detector Properties after Hadron Irradiation. M.Moll, E.Fretwurst, M.Kuhnke, G.Lindström: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 100-10