Current transient spectroscopy using high relaxation voltages up to 1kV was shown to be an effective tool for non-destructive characterization of radiation defect profiles in Si resulting from the MeV ion irradiation. The method was used for profiling of different defect centers produced in low-doped, float zone, n-type Si by irradiation with 3, 4 and 5.3MeV protons to a fluence of 5 x 109 or 1010/cm2. The results were compared with those obtained from capacitance deep level transient spectroscopy and reverse I¯V profiling. Electronic properties and introduction rates of dominant defect centers were also established. It was shown that current transient spectroscopy was capable to trace full-depth profiles of dominant radiation defects and provide precise and more accurate data than previously presented by destructive profiling procedures. Measured distributions of vacancy related radiation defects agree well with the distribution of the
primary damage received from Monte Carlo simulations with the exception of the peak broadening attributed to vacancy diffusion.

Defect Distribution in MeV Proton-Irradiated Silicon Measured by High-Voltage Current Transient Spectroscopy. P.Hazdra, K.Brand, J.Vobecký: Nuclear Instruments and Methods in Physics Research B, 2002, 192[3], 291-300