Irradiation of 3.5GeV Xe ions was performed at room temperature on Czochralski and float zone Si(100) single crystals using fluences of 1012 and 1013Xe/cm2. All the irradiated samples were investigated by infrared spectroscopy at room temperature. For the first time, vacancy-O (VO) complexes were found experimentally in Czochralski Si during high-energy heavy ion irradiation. A depth profile of the IR spectra, the distribution of VO concentration and the interstitial O were successfully obtained along the irradiation depth. The concentration of VO and interstitial O were quantitatively analysed. The effects of electronic excitation and nuclear collision upon the VO production were also considered.

Vacancy-Oxygen Complexes Produced by 3.5GeV Xe Ion Irradiation and their Distribution along Ion Tracks in Single-Crystal Silicon - an Infrared Study. X.G.Diao, Y.Yoshida, K.Hayakawa, F.Shimura, T.Kambara, A.Iwase, Y.Yano: Journal of Physics - Condensed Matter, 2002, 14[3], L57-62