Deep level transient spectroscopy was applied to study the deep levels in Sn-doped and high-energy proton irradiated n-type float-zone Si. The results will be compared with irradiated Sn-free float-zone reference material, in order to evaluate the hardening potential. It will be shown that in Sn-doped Si (FZ:Sn), a number of additional deep levels could be observed, two of which were identified as acceptors associated with Sn¯V. Furthermore, optically active recombination centres were probed by photoluminescence spectroscopy. The photoluminescence results confirm the reduction of electrically active radiation-defect formation in FZ:Sn. At the same time, no Sn-related optically active centres were found so far.

DLTS and PL Studies of Proton Radiation Defects in Tin-Doped FZ Silicon. E.Simoen, C.Claeys, V.Privitera, S.Coffa, M.Kokkoris, E.Kossionides, G.Fanourakis, A.Nylandsted Larsen, P.Clauws: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 19-23