Depth dependence of ion beam induced epitaxial crystallization in Si was studied to investigate the diffusion of defects responsible for crystallization. Re-growth rates for 3MeV Au, 3MeV Si and 5MeV Au were measured by ion channeling for different depths. Decreases in re-growth rates were clearly observed near the surface (<100nm). Calculated damage profiles also decreased near the surface but the measured re-growth rates decreased more. Impurity O atoms recoiling from surface native oxide partially contribute to the decrease at shallow regions below about 30nm. The decrease in re-growth rates at deeper regions suggested the long-range diffusion of defects responsible for crystallization.

Movement of Defects and Atoms during Ion Beam Induced Crystallization. A.Kinomura, A.Chayahara, N.Tsubouchi, C.Heck, Y.Horino, Y.Miyagawa: Nuclear Instruments and Methods in Physics Research B, 2001, 175-177, 319-23