Solid-phase epitaxy was examined in deep amorphous volumes formed in Si wafers by multi-energy self-implantation through a mask. Crystallization was effected at elevated temperatures with the amorphous volume being transformed at both lateral and vertical interfaces. Sample topology was mapped using an atomic force microscope. Details of the process were clarified with both plan-view and cross-sectional transmission electron microscopy analyses. Crystallization of the amorphous volumes resulted in the incorporation of a surprisingly large number of dislocations. These arose from a variety of sources. Some of the secondary structures were identified to occur uniquely from the crystallization of volumes in this particular geometry.

Defect Formation due to the Crystallisation of Deep Amorphous Volumes Formed in Silicon by MeV Ion Implantation. A.C.Y.Liu, J.C.McCallum, J.Wong-Leung: Journal of Materials Research, 2001, 16[11], 3229-37