The evolution of the excess-vacancy region created by a 2MeV, 1016/cm2 Si implantation into the Si surface layer of Si-on-insulator substrates was measured. Free vacancy supersaturations were measured with Sb dopant diffusion markers during post-implant annealing at 700, 800 and 900C, while vacancy clusters were detected by Au labeling. It was demonstrated that a large free vacancy supersaturation existed for short times, during the very early stages of annealing between the surface and the buried oxide (1µm below). Afterwards, the free vacancy concentration returns to equilibrium in the presence of vacancy clusters. These vacancy clusters form at low temperatures and were stable to high temperatures, i.e., they have a low formation energy and high binding energy.

Binding Energy of Vacancy Clusters Generated by High-Energy Ion Implantation and Annealing of Silicon. V.C.Venezia, L.Pelaz, H.J.L.Gossmann, T.E.Haynes, C.S.Rafferty: Applied Physics Letters, 2001, 79[9], 1273-5