An investigation was made of the generation and migration of defects in crystalline Si following their introduction at room temperature by low-energy H ions in a region confined to the near-surface region. The fluence dependence of free carrier compensation and creation of electrically active defects in the n-type samples was monitored by capacitance–voltage and deep level transient spectroscopy measurements, respectively. The defects were responsible for free carrier compensation to depths exceeding about 1µm beyond the top about 0.25µm region of samples where they were generated. A close relationship was noted between generation of the VO–H complex and the VP pair on the free carrier compensation.

Trap-Limited Migration of Vacancy-Type Defects in 7.5keV H–-Implanted Si. P.N.K.Deenapanray: Applied Physics Letters, 2002, 80[9], 1577-9