It was recalled that, although positron annihilation spectroscopy was a proven technique for studying radiation-induced damage, it had only recently been applied to the vacancy-type defects introduced by low-energy implantation. This paper presents measurements of defect profiles following 2 to 100keV B+ implantation of Czochralski and epitaxially-grown Si. The extraction of data relating to the defect profiles and their dependence on impurity content and the proximity of the surface were described. Consideration of the results for annealed samples demonstrated the sensitivity of diffusing positrons to the presence of electric fields, following the creation of p¯n structures.

The Study of Lattice Damage using Slow Positrons Following Low Energy B+ Implantation of Silicon. R.M.Gwilliam, A.P.Knights, A.Nejim, B.J.Sealy, C.P.Burrows, F.Malik, P.G.Coleman: Nuclear Instruments and Methods in Physics Research B, 2001, 175-177, 62-7