Proton irradiation at an energy of 1MeV was used to create an approximately even distribution of simple point defects in both Cz and FZ, n-type Si to a depth of greater than 10μm. The implanted dose ranged from 1011 to 1016/cm2. The vacancy component of the defect concentration was quantitatively measured using positron annihilation and deep level transient spectroscopy. Through careful experimental design it was possible to meaningfully compare the concentrations independently determined using the two approaches. Good agreement was found between the two techniques for the FZ material adding credence to the methods through which defect concentrations were obtained from the primary data. Somewhat less reasonable agreement was found for the Cz material.

A Comparative Study of Vacancies Produced by Proton Implantation of Silicon using Positron Annihilation and Deep Level Transient Spectroscopy. M.A.Lourenço, A.P.Knights, K.P.Homewood, R.M.Gwilliam, P.J.Simpson, P.Mascher: Nuclear Instruments and Methods in Physics Research B, 2001, 175-177, 300-4