Self-interstitials were introduced by additional Si+ implantation into the vacancy-dominated depth range around half of the projected ion range, RP/2, of high-energy ion-implanted Si in order to balance radiation-induced excess vacancies. The undesired gettering of Cu atoms in this region (RP/2 effect) could be suppressed. The threshold was determined necessary to remove the Cu gettering at RP/2. It does approximately agree with the number of the calculated excess vacancies. Additional interstitial-type dislocation loops were formed during annealing at RP/2 as the Si+ fluence exceeds this threshold. Interstitial clusters were not proven to be the gettering centres for Cu trapping.

Gettering Centres in High-Energy Ion-Implanted Silicon Investigated by Point Defect Recombination. R.Kögler, A.Peeva, P.Werner, W.Skorupa, U.Gösele: Nuclear Instruments and Methods in Physics Research B, 2001, 175-177, 340-4