Photoluminescence enables a very large number of defects to be observed in ion-implanted Si, over dose ranges of up to at least 1014/cm2. Simple arguments using the widths of the luminescence lines suggested that the defects lie in the heavily damaged

part of the implanted crystal. It was shown that, by combining optical absorption measurements on neutron-irradiated samples with luminescence measurements on implanted samples, the relative concentrations of ion-implantation defects may be determined. The luminescence spectra were shown to change considerably with between 10 and 40K. In this temperature range, the total number of photons emitted by the layer was conserved, further implying that the strengths of the signals from each defect were proportional to the concentrations of those defects. Some luminescence lines could be linked to DLTS signals, allowing the high resolution capabilities of luminescence to be combined with the ability of DLTS to measure concentrations, providing powerful joint probes into the properties of the implanted regions.

Optical Studies of Ion-Implantation Centres in Silicon. G.Davies, R.Harding, T.Jin, A.Mainwood, J.Leung-Wong: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 1-9