Single crystal CZ Si samples were implanted with H ions to a dose of 2 x 1016/cm2 at room temperature and subsequently annealed in vacuum at 100 to 900C. The aim of the experiment was to determine the conditions for bubble formation within the solid film, which may have important technological application. Defects produced in such samples were studied by deep-level transient spectroscopy and electron paramagnetic resonance spectroscopy. It was shown that high dose H implantation produced vacancy-related and Si self-interstitial clusters. The latter were thought to be responsible for the formation of the weak displacement field. The annealing at higher temperatures creates multivacancy-related clusters responsible for the strong displacement field formation.

DLTS and EPR Study of Defects in H-Implanted Silicon. V.Mikšić, B.Pivac, B.Rakvin, H.Zorc, F.Corni, R.Tonini, G.Ottaviani: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 36-40