High-resolution Laplace deep-level transient spectroscopy was used to investigate defects in n-type Si which were caused by implantation of Si, Ge or Er to doses of the order of 109/cm2. These were compared with defects created in proton irradiated n-type Si. Unlike the simple proton irradiated case, LDLTS spectra of ion implanted Si showed that there were many emission rates associated with defects with energies in the region of Ec-0.4eV. Annealing studies and Laplace deep level transient spectroscopic depth-profiling were carried out, and it was shown that the complex spectra measured from a region less than half way through the implant simplify as the profile was moved through the implant and towards the tail. Annealing studies showed that these defects survive an anneal that should remove the E-centre.

High-Resolution Laplace DLTS Studies of Defects in Ion-Implanted Silicon. J.H.Evans-Freeman, N.Abdelgader, P.Y.Y.Kan, A.R.Peaker: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 41-5