The radiation damage created in Si-based materials by ion implantation of radioactive 57Mn ions at 77 to 500K was studied by Mössbauer spectroscopy on the 14keV γ-rays of the 57Fe daughter atoms. At 77K, more than 60% of the probe atoms were located in a

heavily distorted surrounding in all matrices, the remainder was found in tetrahedral interstitial sites. Two material dependent damage annealing stages were found at 100 to 200 and 300 to 450K. The first leads predominantly to an increase of the interstitial fraction, the second also to the occurrence of substitutional Mn in all matrices. A model was proposed to identify the annealing reactions, taking into account other Mössbauer and emission channeling data.

57Fe Mössbauer Study of Radiation Damage in Ion-Implanted Si, SiGe and SiSn. H.P.Gunnlaugsson, M.Fanciulli, M.Dietrich, K.Bharuth-Ram, R.Sielemann, G.Weyer, Isolde: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 55-60