Enhanced dopant activation and elimination of end-of-range defects in BF2+-implanted Si-on-insulator were achieved by high-density current stressing. With the high-density current stressing, the implantation amorphous Si underwent recrystallization, enhanced dopant activation and elimination of the end-of-range defects. The current stressing method allows the complete removal of end-of-range defects that has not been possible with conventional thermal annealing in the processing of high-performance Si-on-insulator devices.

Enhanced Dopant Activation and Elimination of End-of-Range Defects in BF2+-Implanted Silicon-on-Insulator by High-Density Current. H.H.Lin, S.L.Cheng, L.J.Chen, C.Chen, K.N.Tu: Applied Physics Letters, 2001, 79[24], 3971-3