The effects of pre-amorphizing ion mass on the end-of-range damage and subsequent enhanced diffusivity were investigated. Amorphizing Si with implants of 22keV 28Si+, 32keV 73Ge+, 40keV 119Sn+ and 45keV 207Pb+ provided the mass comparisons. Cross-sectional transmission electron microscopy analysis showed that the amorphous layer depths were approximately 40nm. After post-implantation annealing (750C, 0.5h), plan-view transmission electron microscopy revealed that increasing the ion mass decreased the defect size and density. Quantitative analysis of plan-view transmission electron microscopy results also showed that increasing ion mass decreased the population of interstitials trapped in the end-of-range. Secondary ion mass spectrometry depth profiles of grown-in B marker layers showed that increasing the ion mass decreased the time average enhancement of B diffusivity.

Effects of Amorphizing Species' Ion Mass on the End-Of-Range Damage Formation in Silicon. M.H.Clark, K.S.Jones, T.E.Haynes, C.J.Barbour, K.G.Minor, E.Andideh: Applied Physics Letters, 2002, 80[22], 4163-5