Deep-level transient spectroscopy was performed on p+¯n¯n+ Si diodes subjected to medium-dose H implantation (1013/cm2) and then annealed (400C). Three different energies were chosen to explore different parts of the damage profile. At least 10 deep level transient spectroscopic lines were resolved and, in particular, the presence of 2 levels located at 0.29 and 0.32eV from the conduction band (Ec) was confirmed. Two electron traps located near the mid-gap and not observed for low-dose irradiation, were reported and found to be associated with complex defects including vacancies. Two other levels were also reported. The level at Ec - 0.20eV was also observed in case of medium

doses whereas the level at Ec - 0.36eV was originating from an impurity-related complex involving C.

Generation of Defects Induced by MeV Proton Implantation in Silicon - Influence of Nuclear Losses. M.L.David, E.Oliviero, C.Blanchard, J.F.Barbot: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 309-12