Deep level transient spectroscopy was used to study the distributions as a function of depth of the single negative divacancy complex in n-type FZ Si implanted with low doses of H, He and O ions. The energies of the incoming ions were chosen to correspond to the same projected range, i.e. about 24μm. The defect distribution was found to be relatively broad as compared to Monte Carlo simulations of the initially created vacancy distribution, particularly for the case of proton implantation. Furthermore, it was shown that the yield of divacancies, per generated vacancy, increases slightly with incoming ion mass and was 3 times higher at half the projected range than in the damage peak.

Defect Distributions in Silicon Implanted with Low Doses of MeV Ions. A.Hallén, N.Keskitalo: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 344-8