Both O and C ion implantation were frequently used to form either insulating buried SiO2 or SiC layer for various purposes. This creates a renewal of the interest in defects produced during such implantation processes. Deep-level transient spectroscopic studies were made here of defect states which occurred in B-doped p-type Si after high-dose C+ and CO+ ion implantation and subsequent thermal annealing. It was shown that the predominant defect which was created during implantation was, in both cases, related to Si self-interstitial clusters. Upon annealing at higher temperatures, these evolved into extended structural defects.Defects in Carbon and Oxygen Implanted p-Type Silicon. B.Pivac, I.Kovačević, V.Borjanović: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 355-9