The production of stable vacancy-related point defects in proton-implanted float-zone and epitaxial Si was studied as a function of dose-rate, after low doses (below 1010/cm2). The well-known inverse dose-rate effect was observed in both types of materials with a decrease in the concentration of vacancy-related defects as the dose-rate increases. The effect was less pronounced in O-lean epitaxial Si. Moreover, a continuous decrease of the vacancy-related defect concentration as a function of the flux was measured while a threshold was expected according to previous studies. Both of these results could be explained by a simple calculation, taking into account the influence of the O concentration as well as the influence of the diffusion coefficient of point defects on the inverse dose-rate effect.

Dose-Rate Influence on the Defect Production in MeV Proton-Implanted Float-Zone and Epitaxial n-Type Silicon. P.Lévêque, A.Hallén, P.Pellegrino, B.G.Svensson, V.Privitera: Nuclear Instruments and Methods in Physics Research Section B, 2002, 186[1-4], 375-9