Experiments were carried out in order to reveal the interactions between different types of ion-induced defects upon annealing in MeV (P+C) implanted Si. Attempts were made deliberately to overlap the interstitial-rich zone, induced by P implantation, with the vacancy-rich zone induced by C implantation. Double crystal X-ray diffraction rocking curve analyses of samples annealed at 550C indicated that a positive strain built up at

about 2.3μm, by a single 3MeV P+ implantation, was effectively reduced by some 50% using dual implantation (3MeV P+; 3MeV C+). However, the amount of strain relaxation in the C implanted layer does not decrease upon annealing.

Defect Interaction by Dual MeV Ion Implantation in Silicon. J.S.Ro, N.H.Cho: Nuclear Instruments and Methods in Physics Research B, 2002, 187[2], 215-9