Boron marker-layer structures were used to investigate the effects of B doping on the evolution of the implantation damage and of an associated transient enhanced diffusion. The samples were damaged by Si implants at different doses in the range of 2 x 1013 to 1014/cm2 and annealed at 740C for times between 2s and 4h. The values of interstitial supersaturation, from the beginning of the annealing up to the complete damage recovery, were determined for the different Si doses for a given B doping level. Damage removal was followed by double crystal X-ray diffraction. The results confirmed that the formation of B-interstitial Si clusters traps a relevant fraction of the interstitials produced by the implantation. This trapping action gave rise to a strong reduction of the interstitial supersaturation, prevents the interstitial clusters from being transformed in {113} defects and modifies the time evolution of the transient enhanced diffusion. X-ray analyses indicate also that the size of the B-interstitial Si clusters remains below 2nm.

Effects of Boron-Interstitial Silicon Clusters on Interstitial Supersaturation during Post-Implantation Annealing. S.Solmi, L.Mancini, S.Milita, M.Servidori, G.Mannino, M.Bersani: Applied Physics Letters, 2001, 79[8], 1103-5