The effect of stress induced by chemical vapor deposited SiO2 films on the solid-phase epitaxial re-growth and the corner defect generation in As+-implanted, two-dimensional amorphized Si was studied. A trench structure was used to form the two-dimensional amorphous layer and to induce the stress in the Si substrate. Implantation with 80keV As to a dose of 3 x 1015/cm2 completely amorphized a 100nm-thick Si surface layer under the trench bottom and produced a curved amorphous/crystalline interface under the bottom corner of the trench. The stress level in the chemical vapor deposited SiO2 films was varied by using different deposition techniques. It was found that, in the sample with a high-tensile stressed chemical vapor deposited SiO2 film as a trench fill, a notch was formed in the amorphous/crystalline interface after annealing (500C, 4h) and micro-twins were formed on {111} planes, after annealing (650C, 1h), under the bottom corner of the trench. The notch formation and the corner defect generation were explained by the effect of the shear stress induced by the chemical vapor deposited SiO2 films on the activation barrier of solid-phase epitaxial re-growth.

Effects of Stress on Solid-Phase Epitaxial Regrowth and Corner Defect Generation in As+-Implanted, Two-Dimensional Amorphized Si. Y.G.Shin, J.Y.Lee, M.H.Park, H.K.Kang: Journal of Crystal Growth, 2001, 231[1-2], 107-14