High resistivity Si with different concentrations of the impurities O and C were irradiated with neutrons and charged particles. The deep level transient spectroscopy method was used to determine the defect parameters. During irradiation of Si with particles lattice atoms were displaced and the primary defects Si interstitials and vacancies form the impurity defects Ci, CiCs, CiOi and VOi. In the dense displacement regions mainly divacancies VV were formed. The radiation-induced defects change the macroscopic parameters of Si detectors. During irradiation with neutrons mainly clusters were created. During irradiation with charged particles the generation of single isolated displacements was enhanced due to Coulomb scattering. This was the main difference between irradiation damage after charged particle and neutron irradiation. The higher radiation tolerance of O enriched Si after charged particle irradiation was related to the higher introduction rates of impurity defects, because only the reaction kinetic of point defects was influenced by the impurity content. The cluster damage was less particle dependent and the threshold energy at which a recoiled Si atom starts to create a cluster was estimated to be 300eV.

Defect Generation in Crystalline Silicon Irradiated with High Energy Particles. M.Kuhnke, E.Fretwurst, G.Lindström: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 144-51