Ion beam-induced charge collection technique could provide interesting and straightforward information about the different electronic device characteristics. This nuclear microprobe technique was used for the qualitative analysis of charge collection efficiency spatial distribution in three different types of EFG Si material. Using ion beam-induced charge collection technique, the influence of light impurities (O, C) on the electrical activity of extended defects was studied. It was shown that O segregating close to structural defects influenced their electrical activity. The same effect was not observed for C. It was demonstrated that the ion beam-induced charge collection technique could be applied to provide spatial information about the position of electrically active defects, and/or their activation or deactivation during subsequent processing.

Defects in Polycrystalline Silicon Studied by IBICC. V.Borjanović, M.Jakšić, Z.Pastuović, B.Pivac, B.Vlahović, J.Dutta, R.Ječmenica: Solar Energy Materials and Solar Cells, 2002, 72[1-4], 487-94