Dislocation generation in the initial stage of Czochralski-grown Si crystals doped with B in various concentrations was observed by means of X-ray topography. Slip dislocations were generated due to the thermal stress at the dipping stage in the seed and in a crystal doped with B in the concentration lower than 1018/cm3. Misfit dislocations were generated and penetrated into the crystal when the difference of B concentration between the seed and crystal was higher than about 8 x 1018/cm3.

X-Ray Topographic Observation of Dislocation Generation at the Seed/Crystal Interface of Czochralski-Grown Si Highly Doped with B Impurity. I.Yonenaga, T.Taishi, X.Huang, K.Hoshikawa: Materials Science and Engineering B, 2002, 91-92, 192-5