Structural defects and optical features of p-type Cz---Si after implantation with 1MeV Er ions to a dose of 1014/cm2, followed by annealing (620 to 1100C, 0.5 to 1h) in Cl-containing atmosphere or Ar were studied by transmission electron microscopy, optical microscopy in combination with selective chemical etching, and photoluminescence . High temperature annealing in the chlorine-containing ambience gave rise to perfect prismatic dislocation loops as well as 60° and pure edge dislocations with dominant dislocation-related lines in the photoluminescence spectrum. Pure edge dislocations were responsible for the appearance of the lines. The Er-related lines due to the intra-4f shell transitions in the rare earth ions dominate in the photoluminescence spectra and no structural defects were observed after high temperature annealing in Ar. The role of the intrinsic point defects in the transformation of structural defects and optically active centers was analyzed.

Structural Defects and Dislocation-Related Photoluminescence in Erbium-Implanted Silicon. N.A.Sobolev, A.M.Emelyanov, E.I.Shek, V.I.Sakharov, I.T.Serenkov, Y.A.Nikolaev, V.I.Vdovin, T.G.Yugova, M.I.Makovijchuk, E.O.Parshin, S.Pizzini: Materials Science and Engineering B, 2002, 91-92, 167-9