Buried dislocation networks obtained by Si(001) wafer bonding pattern the free surface of the sample, giving rise to long-range undulations and short-range embossing, respectively, for flexion and rotation misalignment. Comparison with continuum-elasticity calculations revealed that this patterning was enhanced by strain-driven over-

etching. These surfaces were a template for growth, and it was shown that Ge quantum dots could be ordered with a fourfold symmetry by proceeding a post-growth annealing.

Ordering of Ge Quantum Dots with Buried Si Dislocation Networks. F.Leroy, J.Eymery, P.Gentile, F.Fournel: Applied Physics Letters, 2002, 80[17], 3078-80