Defects introduced into dendritic web Si during growth have deleterious effects on electrical properties, and in extreme cases could lead to growth termination. This study used transmission X-ray topography and etch pitting techniques to elucidate the formation of several defect structures in dendritic web Si. Results indicate that the formation of third dendrites was caused by liquid droplet entrapment within the web. Inverted U-shaped surface features have no correlation with internal dislocation structure, but were probably caused by a decrease in web thickness near the growth initiation. Stringers were formed by the reaction of two dislocations of different Burgers vectors, and the stringer density does not increase with ribbon length. Finally, web curvature was caused by plastic deformation due to a build up of glissile dislocations pinned by surface steps.

Origins of Defect Structures in Dendritic Web Silicon. J.R.Hayes, X.Zhang, D.L.Meier, S.Mahajan: Journal of Crystal Growth, 2001, 233[3], 451-9