The acoustic emission of donor Si was studied. It was shown that the sound emission was due to the electric-current-stimulated motion of edge dislocations. When varying the current density flowing through a dislocated crystal, a correlation between the maximum of the acoustic-emission spectrum of the Si and the velocity of the line-defect motion was revealed. By matching the theory with the experimental data, the diffusion constants of the atoms in the dislocation impurity atmosphere were estimated and the effective charge

per atom in a dislocation line at different times (0.3 to 3h) during the isothermal annealing (1273K) of Si samples.

Acoustic-Emission Probing of Line Defects in Silicon. A.A.Skvortsov, A.M.Orlov, A.A.Solovev: Physics of the Solid State, 2001, 43[4], 640-4