Accurate modeling of extended defect kinetics was of primary importance for prediction of transient enhanced diffusion following ion implantation of Si. A previously developed moment-based model accurately accounts for formation and evolution of {311} defects and could be used to predict transient enhanced diffusion under sub-amorphizing conditions. By using experimental knowledge about the distribution of the {311} defect population, and making approximations to the sums that were encountered in the model, it was possible to simplify this model. It was demonstrated that these simplifications did not affect the predictive capabilities of the model for {311} defect kinetics and transient enhanced diffusion. Furthermore, it was possible to extend the model, under the same simplifying assumptions, so as to account for dislocation loop formation from {311} defect unfaulting and dislocation loop evolution; thus giving a unified model for interstitial aggregation in Si. The resulting analytical model does not impose any computational speed penalty when the loop extension was turned on, making it applicable to a wide range of problems.

A Combined Model for {311} Defect and Dislocation Loop Evolution - Analytical Formulation of Kinetic Precipitation Model. A.H.Gencer, S.T.Dunham: Journal of Applied Physics, 2002, 91[5], 2883-9