An investigation was made of how the presence of a dislocation loop layer affects the surface interstitial supersaturation during thermal oxidation of Si. In order to address this issue, a dislocation loop layer was created at various distances from the surface by using the Si wafer bonding technique. The results showed a linear dependence of the injection flux of interstitials with the inverse of the distance of the loop layer from the surface and also that the presence of the layer does not affect the surface interstitial supersaturation. This conclusion enables the reliable use of the dislocation loops as point defect detectors.

Investigation of the Influence of a Dislocation Loop Layer on Interstitial Kinetics during Surface Oxidation of Silicon. D.Tsoukalas, D.Skarlatos, J.Stoemenos: Nuclear Instruments and Methods in Physics Research Section B, 178[1-4], 180-3