He+ ions were implanted into a (111) epitaxial n-type Si wafer at different dose rates (fluxes) ranging from 2.5 x 1012 to 1.3 x 1013/cm2s while keeping the incident energy and dose constant (1.6MeV, 2 x 1016/cm2). After implantation the samples were subjected to thermal annealing (800C, 0.5h). Cross-sectional transmission electron microscopy was used to characterize the damage layer. Even in the as-implanted samples the transmission

electron microscopic observations revealed the formation of a buried layer containing a dense array of small bubbles. After annealing, a large band of defects made up of bubbles and dislocations was observed in all samples. However, the characteristics of the damage layer found depended on the flux. For the lowest flux, only platelets and planar clusters of He bubbles lying in the {001} planes were observed. Their nucleation was considered in terms of the trap-mutation process. For higher fluxes a continuous band of bubbles with rows of prismatic punching related dislocation loops was observed. These dislocations could extend over several micrometers away from the buried layer and were emitted from clusters. For the highest flux these clusters were found to lie in the {100} or {110} planes. The plate-like structures were explained in terms of the diluted system. The damage evolution with increasing dose rates was explained by taking into account the vacancy production.

Influence of Dose Rate on Bubble Formation by High Energy He Implantation in Silicon. E.Oliviero, M.F.Beaufort, J.F.Barbot: Journal of Applied Physics, 2001, 90[4], 1718-24