A new defect morphology of dark stripes was observed in both as-grown and annealed Czochralski Si crystals by photoluminescence mapping of multi-chroic infra-red light-scattering tomography system. The dark stripes in the as-grown Czochralski crystal were believed to be highly decorated striations, where grown-in defects have inhomogeneously segregated during the crystal growth. When this crystal was annealed at 1150C for 16h in an O2 atmosphere, defects such as stacking faults, O-precipitate-related polyhedral defects, impurities and dislocation loops were observed around the dark stripes in the oxidation-induced stacking fault ring region using transmission electron microscopy and the multi-chroic infra-red light-scattering tomographic system. The results suggested that the main grown-in defects around dark stripes were O precipitate nuclei and vacancy-related nuclei, which resulted in the formation of such defects during the thermal oxidation process.

Study of the Characteristics of Defects in the Oxidation-induced Stacking Fault-Ring Area in Czochralski Silicon Crystals by Multichroic Infrared Light Scattering Tomography and Transmission Electron Microscopy. M.Ma, T.Irisawa, T.Ogawa, C.Frigeri: Japanese Journal of Applied Physics - 1, 2001, 40[6A], 4149-52