The effect of stress induced by a chemical vapor-deposited SiO2 film on the microstructure of the corner defects in As+-implanted, 2-dimensional amorphized Si was studied by transmission electron microscopy. A fine periodic trench structure was used to form 2-dimensional amorphous layers and to induce stress in the Si substrate. Implantation with 80keV As to a dose of 3 x 1015/cm2 amorphized a 100nm-thick Si surface under the trench bottom and produced a sharply curved amorphous/crystalline interface under the bottom corner of the trench. The trench filled with a high-tensile stressed chemical vapor deposited SiO2 film induced a high stress field in the Si substrate. The microstructure of the corner defects was closely related to the stress induced by the trench. In the case of the absence of the stress vacancy-type dislocation half loops were generated on {111} planes after annealing at 650 or 800C at the corner of the re-growth regions. While, in the case of the presence of the stress induced by the trench, micro-twins were formed on {111} planes after annealing. It was found that the microstructure

of the corner defects was determined by the re-growth behavior at intermediate stages of the re-growth process.

Effects of Stress on the Microstructure of the Corner Defect in As+-Implanted, Two-Dimensional Amorphized Si. Y.G.Shin, J.Y.Lee, M.H.Park, H.K.Kang: Journal of Crystal Growth, 2001, 233[4], 673-80