It was recalled that {311} defects were extended rod-like defects which played a central role in the processing of Si during integrated circuit manufacturing. Diffuse X-ray scattering techniques provide a non-destructive means to detect defects in solids. However, to date there was no knowledge of what the X-ray scattering pattern from

{311} defects looks like. Using a recently introduced fully atomistic modeling scheme, the diffuse X-ray scattering patterns were calculated from {311} defects. The results demonstrate how {311} defects could be detected, how the main varieties of {311} defect could be distinguished, and how both the defect width and length could be derived from the scattering.

Diffuse X-Ray Scattering from 311 Defects in Si. K.Nordlund: Journal of Applied Physics, 2002, 91[5], 2978-83