Crystalline Si, when treated using H plasma, exhibited {111} plate-like defects. From polarized Raman spectroscopy, 2 different H-related extended {111} defects were identified which existed simultaneously in the samples. These were an optically dense structure with ε  14 and a structure with ε  1 which contained the H2 molecules. The platelet with ε  14 was attributed to agglomerated H2* defects in a (111) plane. At 100C, it transformed into a platelet with ε  1, which was attributed to hydrogenated Si (111) surfaces.

Evolution of Hydrogen Platelets in Silicon Determined by Polarized Raman Spectroscopy. E.V.Lavrov, J.Weber: Physical Review Letters, 2001, 87[18], 185502 (4pp)