Low-energy Ar ion irradiation of a B-doped Si sample results in the formation and subsequent propagation of an n¯p junction from the front surface into the bulk, to the depth comparable to the sample thickness. The effect was attributed to the generation of self-interstitials at the irradiated surface, and their long-range diffusion into the sample. The in-diffused self-interstitials lead to a loss of B acceptors, either by the kick-out reaction or by acceleration of O transport (and formation of B¯O complexes).

Non-Equilibrium Impurity Redistribution in Si. A.N.Buzynin, A.E.Lukyanov, V.V.Osiko, V.V.Voronkov: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 366-70