Defect migration and interaction with impurities and dopant atoms were monitored by using in situ (leakage current) and ex situ deep-level transient spectroscopy techniques. The n-type and p-type Si samples were implanted with He or Si with energies of 0.04 to 10MeV to doses of 109 to 1014/cm2 and dose rates of 107 to 1012/cm2s and the depth profiles of the room-temperature stable complexes were studied. Defect diffusion effects were monitored in reverse biased junctions, during and after implantation and it was observed that the leakage current was given mainly by vacancy-type defects in both n-type and p-type Si. When the implantation dose was above a threshold (2 x 1013 He/cm2 for 1MeV He) a strong difference arose in the defect generation in p-type Si, suggesting a different defect evolution due to the presence of B.

Room Temperature Defect Diffusion in Ion-Implanted c-Si. S.Libertino, S.Coffa, A.La Magna: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 265-70