Sn¯vacancy complexes Snn¯Vm, where n and m were less than or equal to 2, were investigated by first-principles cluster and super-cell methods. Their structures, spin-densities, electrical levels and formation energies were reported. It was found that the Sn¯vacancy interaction was short ranged and consequently the diffusion mechanism of Sn was somewhat different from that of the E-center.

Structure of Tin-Vacancy Defects in Silicon. M.Kaukonen, R.Jones, S.Öberg, P.R.Briddon: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 24-9